Method for deposition of a conductor in integrated circuits

Patent · Tue Dec 31 23:00:00 EST 1996

OSTI ID:871129

Creighton, J Randall ^[1]; Dominguez, Frank ^[1]; Johnson, A Wayne ^[1]; Omstead, Thomas R ^[1]

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1. Albuquerque, NM

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 5663098
• OSTI ID: 871129
• Country of Publication: United States
• Language: English

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