Method for deposition of a conductor in integrated circuits
Patent
·
OSTI ID:527788
A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.
- Research Organization:
- AT&T Corporation
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,663,098/A/
- Application Number:
- PAN: 8-258,911
- OSTI ID:
- 527788
- Country of Publication:
- United States
- Language:
- English
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