Laser-chemical deposition and etching on the metallization level of integrated circuits

Conference · Sun Nov 30 23:00:00 EST 1986

OSTI ID:6536051

Johnson, A W; Greenberg, K E

Laser-controlled chemical deposition and etching techniques were used to modify integrated circuits. This work used a pulsed laser to initiate and control the etching, by chlorine gas, of aluminum conductors. New conducting paths were then formed by laser-chemical vapor deposition of highly-doped silicon from silane and diborane. Improved conductivity of laser-deposited connectors was achieved by the selective deposition of tungsten on the silicon. These techniques were used to ''rewire'' an integrated circuit allowing the full evaluation of the corrected circuit design.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6536051
• Report Number(s): SAND-86-1387C; CONF-861207-104; ON: DE87010035
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOPED MATERIALS
ELECTRONIC CIRCUITS
ELEMENTS
ETCHING
HEATING
INTEGRATED CIRCUITS
IRRADIATION
LASER-RADIATION HEATING
MATERIALS
METALS
MICROELECTRONIC CIRCUITS
MODIFICATIONS
PLASMA HEATING
PULSED IRRADIATION
SEMIMETALS
SILICON
SURFACE COATING
SURFACE FINISHING
TRANSITION ELEMENTS
TUNGSTEN