Laser-plasma interactions for the deposition and etching of semiconductor materials
Conference
·
OSTI ID:6200688
Laser-plasma chemical processing is a versatile materials processing technique in which an ultraviolet laser and a glow discharge are both required in order for deposition or etching to occur on semiconductor substrates. This new materials processing technique has been used to both deposit and etch semiconductor materials on a number of substrates. Recent results have demonstrated that laser-plasma chemical processing can also be used to deposit epitaxial silicon films on single-crystal silicon wafers. Laser Raman spectroscopy, transmission electron microscopy, and scanning electron microscopy were used to characterize the deposited and etched films. Results obtained to date have been interpreted in terms of a mechanism which involves the interaction of the incident ultraviolet-laser radiation with a plasma-deposited adlayer on the irradiated substrate.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6200688
- Report Number(s):
- SAND-84-1926C; CONF-8405251-1; ON: DE85000458
- Country of Publication:
- United States
- Language:
- English
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