Electron-beam assisted CVD of silicon homoepitaxial films

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6551258

West, J P; Fleddermann, C B

The use of a wide-area electron beam to aid the deposition of epitaxial silicon films has been studied. The electron beam used in this study is generated using a cold cathode, abnormal-glow discharge which allows a wide variation of electron energy and beam current. Depositions are performed on single crystal silicon substrates which are prepared using standard wet chemical silicon cleaning techniques and an in situ plasma etch using nitrogen tri-fluoride diluted in hydrogen. The beam diameter is approximately 10 cm and can readily be scaled up to accommodate larger diameters, allowing great potential for large area single wafer deposition. Using electron beams generated in this system, we have demonstrated enhanced growth rates and improved crystalline quality for films grown with electron-beam enhancement. 8 refs., 2 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6551258
• Report Number(s): SAND-88-1710C; CONF-881155-32; ON: DE89005238
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
ELECTRON BEAMS
ELEMENTS
ENERGY BEAM DEPOSITION FILMS
FILMS
LEPTON BEAMS
MATERIALS
PARTICLE BEAMS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
TEMPERATURE DEPENDENCE