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U.S. Department of Energy
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Quantitative analysis of phosphosilicate glass films on silicon wafers

Technical Report ·
OSTI ID:5262740
We determined the phosphorus and silicon content of 6000 to 10,000A phosphosilicate glass films deposited on 5 cm diameter <100> silicon wafers. The thin film was removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si content of the solution was determined by inductively coupled plasma - atomic emission spectroscopy (ICP). The glass films had 86 to 530 ..mu..g P and 920 to 1700 ..mu..g Si. Assuming these two elements were in the film as P/sub 2/O/sub 5/ and SiO/sub 2/, the calculated weight percent of phosphorus in the film ranged from 2.2 to 12 wt % with an estimated uncertainty of 2.73 to 10.1 relative percent. These analyses will be used to determine the composition of standards which were prepared simultaneously with these samples. Results will aid in control of one step in a microcircuit fabrication process involving chemical vapor deposition of phosphosilicate glass on silicon wafers by determination of the P content per unit area for control samples using a Kevex x-ray fluorescence spectrometer.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5262740
Report Number(s):
SAND-82-0039; ON: DE82017642
Country of Publication:
United States
Language:
English