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Title: Determination of BPSG thin-film properties using IR reflection spectroscopy of product wafers

Abstract

Borophosphosilicate glass (BPSG) thin films are widely used in the microelectronics industry as passivation layers, planarization layers, low-fusion-temperature dielectrics, etc. Currently available analytical methods for determining boron and phosphorus content in BPSG films do not meet the demands of at-line or in-situ quality control process monitoring. Infrared (IR) spectroscopy satisfies many of the at-line or in-situ issues, but has only recently been capable of providing quantitative results using undoped and unpatterned silicon substrates. Three BPSG calibration sets were analyzed using infrared external reflection-absorption spectroscopy: (1) 21 films deposited on undoped silicon coated with 0.1 {mu}m of silicon dioxide, (2) 21 films deposited on undoped silicon, and (3) 9 films deposited on microelectronics product wafers. A multivariate partial least squares analysis of the spectral data for the first large data set showed that boron content, phosphorus content, and film thickness can be quantified with precisions of 0.10 wt%, 0.12 wt%, and 30 {angstrom}, respectively. The second large data set yielded similar results. The precisions obtained for the nine product wafer samples were 0.13 wt%B, 0.09 wt%P, and for film thickness 103 {angstrom}.

Authors:
; ;  [1];  [2];  [3]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Chemistry Dept.
  2. Sandia National Labs., Albuquerque, NM (United States)
  3. National Semiconductor, Santa Clara, CA (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10122515
Report Number(s):
SAND-93-1635C; CONF-931108-77
ON: DE94006591; BR: GB0103012; TRN: AHC29405%%2
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; GLASS; ABSORPTION SPECTROSCOPY; BORON; QUANTITATIVE CHEMICAL ANALYSIS; PHOSPHORUS; INFRARED RADIATION; PROTECTIVE COATINGS; MICROELECTRONIC CIRCUITS; ACCURACY; ABSORPTION SPECTRA; 400102; CHEMICAL AND SPECTRAL PROCEDURES

Citation Formats

Niemczyk, T M, Franke, J E, Zhang, Lizhong, Haaland, D M, and Radigan, K J. Determination of BPSG thin-film properties using IR reflection spectroscopy of product wafers. United States: N. p., 1993. Web.
Niemczyk, T M, Franke, J E, Zhang, Lizhong, Haaland, D M, & Radigan, K J. Determination of BPSG thin-film properties using IR reflection spectroscopy of product wafers. United States.
Niemczyk, T M, Franke, J E, Zhang, Lizhong, Haaland, D M, and Radigan, K J. Fri . "Determination of BPSG thin-film properties using IR reflection spectroscopy of product wafers". United States. https://www.osti.gov/servlets/purl/10122515.
@article{osti_10122515,
title = {Determination of BPSG thin-film properties using IR reflection spectroscopy of product wafers},
author = {Niemczyk, T M and Franke, J E and Zhang, Lizhong and Haaland, D M and Radigan, K J},
abstractNote = {Borophosphosilicate glass (BPSG) thin films are widely used in the microelectronics industry as passivation layers, planarization layers, low-fusion-temperature dielectrics, etc. Currently available analytical methods for determining boron and phosphorus content in BPSG films do not meet the demands of at-line or in-situ quality control process monitoring. Infrared (IR) spectroscopy satisfies many of the at-line or in-situ issues, but has only recently been capable of providing quantitative results using undoped and unpatterned silicon substrates. Three BPSG calibration sets were analyzed using infrared external reflection-absorption spectroscopy: (1) 21 films deposited on undoped silicon coated with 0.1 {mu}m of silicon dioxide, (2) 21 films deposited on undoped silicon, and (3) 9 films deposited on microelectronics product wafers. A multivariate partial least squares analysis of the spectral data for the first large data set showed that boron content, phosphorus content, and film thickness can be quantified with precisions of 0.10 wt%, 0.12 wt%, and 30 {angstrom}, respectively. The second large data set yielded similar results. The precisions obtained for the nine product wafer samples were 0.13 wt%B, 0.09 wt%P, and for film thickness 103 {angstrom}.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {12}
}

Conference:
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