Plasma-initiated laser deposition of polycrystalline and monocrystalline silicon films

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:5273906

Gee, J M; Hargis, Jr, P J; Carr, M J; Tallant, D R; Light, R W

This paper reports a new method of silicon deposition using the interaction between the radiation from a pulsed ultraviolet excimer laser and the plasma species produced in a glow discharge in silicane (SiH/sub 4/). Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy revealed that the morphology ranged from polycrystalline silicon at laser fluences of 0.13 to 0.17 J/cm/sup 2/ to epitaxial silicon at fluences of 0.4 to 0.6 J/cm/sup 2/. Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5273906
• Report Number(s): SAND-83-1416C; CONF-831174-64; ON: DE84005527
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
FILMS
LASER RADIATION
LASER SPECTROSCOPY
MICROSCOPY
PLASMA
RADIATIONS
RAMAN SPECTRA
SEMIMETALS
SILICON
SPECTRA
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY