Method of making an InAsSb/InAsSbP diode lasers

Razeghi, Manijeh

Method of making an InAsSb/InAsSbP diode lasers

Patent · Tue Dec 31 23:00:00 EST 1996

OSTI ID:871102

Razeghi, Manijeh ^[1]

Wilmette, IL

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

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Assignee:: Northwestern University (Evanston, IL)

Patent Number(s):: US 5658825

OSTI ID:: 871102

Country of Publication:: United States

Language:: English

References (25)

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm Kurtz, S. R.; Biefeld, R. M.; Allerman, A. A. Applied Physics Letters, Vol. 68, Issue 10 https://doi.org/10.1063/1.115925	journal	March 1996
Radiation recombination in InAsSb/InAsSbP double heterostructures Aydaraliev, M.; Bresler, M. S.; Gusev, O. B. Semiconductor Science and Technology, Vol. 10, Issue 2 https://doi.org/10.1088/0268-1242/10/2/005	journal	February 1995
2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers Baranov, A. N.; Imenkov, A. N.; Sherstnev, V. V. Applied Physics Letters, Vol. 64, Issue 19 https://doi.org/10.1063/1.111603	journal	May 1994
Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE Morosini, M. B. Z.; Herrera-Perez, J. L.; Loural, M. S. S. IEEE Journal of Quantum Electronics, Vol. 29, Issue 6 https://doi.org/10.1109/3.234475	journal	June 1993
High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m Choi, H. K.; Eglash, S. J. IEEE Journal of Quantum Electronics, Vol. 27, Issue 6 https://doi.org/10.1109/3.89977	journal	June 1991
3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy Menna, R. J.; Capewell, D. R.; Martinelli, Ramon U. Applied Physics Letters, Vol. 59, Issue 17 https://doi.org/10.1063/1.106101	journal	October 1991
Continuous wave operation of InAs/InAs _x Sb _{1− x} midinfrared lasers Zhang, Yong‐Hang Applied Physics Letters, Vol. 66, Issue 2 https://doi.org/10.1063/1.113535	journal	January 1995
High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm Le, H. Q.; Turner, G. W.; Eglash, S. J. Applied Physics Letters, Vol. 64, Issue 2 https://doi.org/10.1063/1.111548	journal	January 1994
Growth of InAsSb quantum wells for long-wavelength (∼4 μm) lasers Turner, G. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 2 https://doi.org/10.1116/1.588139	journal	March 1995
Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system Mani, Habib; Joullie, Andre F. Physical Concepts of Materials for Novel Optoelectronic Device Applications, SPIE Proceedings https://doi.org/10.1117/12.24531	conference	February 1991
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions Kurtz, S. R.; Biefeld, R. M.; Dawson, L. R. Applied Physics Letters, Vol. 64, Issue 7 https://doi.org/10.1063/1.111022	journal	February 1994
Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy Chiu, T. H.; Tsang, W. T.; Ditzenberger, J. A. Applied Physics Letters, Vol. 49, Issue 17 https://doi.org/10.1063/1.97471	journal	October 1986
New III-V double-heterojunction laser emitting near 3.2μm Mani, H.; Boissier, G.; Joullie, A. Electronics Letters, Vol. 24, Issue 25 https://doi.org/10.1049/el:19881052	journal	January 1988
High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm Choi, H. K.; Turner, G. W.; Connors, M. K. IEEE Photonics Technology Letters, Vol. 7, Issue 3 https://doi.org/10.1109/68.372746	journal	March 1995
GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m Choi, H. K.; Walpole, J. N.; Turner, G. W. IEEE Photonics Technology Letters, Vol. 5, Issue 10 https://doi.org/10.1109/68.248399	journal	October 1993
Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition Kim, S.; Erdtmann, M.; Wu, D. Applied Physics Letters, Vol. 69, Issue 11 https://doi.org/10.1063/1.117048	journal	September 1996
Shallow diffusion of zinc into InAs and InAsSb Khald, H.; Mani, H.; Joullie, A. Journal of Applied Physics, Vol. 64, Issue 9 https://doi.org/10.1063/1.341195	journal	November 1988
n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy Wang, C. A.; Jensen, K. F.; Jones, A. C. Applied Physics Letters, Vol. 68, Issue 3 https://doi.org/10.1063/1.116698	journal	January 1996
Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Eglash, S. J.; Choi, H. K. Applied Physics Letters, Vol. 57, Issue 13 https://doi.org/10.1063/1.103462	journal	September 1990
InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm Eglash, S. J.; Choi, H. K. Applied Physics Letters, Vol. 64, Issue 7 https://doi.org/10.1063/1.111029	journal	February 1994
Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers Choi, H. K.; Eglash, S. J.; Turner, G. W. Applied Physics Letters, Vol. 64, Issue 19 https://doi.org/10.1063/1.111601	journal	May 1994
Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys Aydaraliev, M.; Zotova, N. V.; Karandashov, S. A. Semiconductor Science and Technology, Vol. 8, Issue 8 https://doi.org/10.1088/0268-1242/8/8/015	journal	August 1993
High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density Choi, H. K.; Eglash, S. J. Applied Physics Letters, Vol. 61, Issue 10 https://doi.org/10.1063/1.107630	journal	September 1992
Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy Choi, H. K.; Eglash, S. J. Applied Physics Letters, Vol. 59, Issue 10 https://doi.org/10.1063/1.105544	journal	September 1991
2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C Garbuzov, D. Z.; Martinelli, R. U.; Menna, R. J. Applied Physics Letters, Vol. 67, Issue 10 https://doi.org/10.1063/1.115546	journal	September 1995

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Method of making an InAsSb/InAsSbP diode lasers

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