Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)
- Belarussian State University (Belarus)
The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band optical transitions were determined for the first time for InAsSb/InAsSbP diode lasers oscillating at wavelengths of 3.1-3.2 {mu}m. It is established that the contribution of nonradiative recombination to the lasing threshold can be as large as 97%. The internal quantum yield of luminescence for the InAs{sub 0.97}Sb{sub 0.03} compound is no higher than 3%. Most likely, the nonradiative channel is formed with involvement of Auger recombination with the constant C = 4.2 Multiplication-Sign 10{sup -38} m{sup 6}s{sup -1} (T = 77 K). The studied samples of lasers feature relatively low optical losses {rho} = 900 m{sup -1} and internal quantum efficiency of emission at the level of 0.6. The spontaneous lifetime of nonequilibrium charge carriers as determined from the radiative-recombination rate is equal to 6 Multiplication-Sign 10{sup -8} s, which is consistent with known published data.
- OSTI ID:
- 22004923
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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