Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

Journal Article · Tue Feb 14 23:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617020117· OSTI ID:22649643

Bazhenov, N. L.; Semakova, A. A.; Mikhailova, M. P. ^[1]; Stoyanov, N. D.; Kizhaev, S. S.; Molchanov, S. S.; Astakhova, A. P. ^[2]; Chernyaev, A. V. ^[1]; Lipsanen, H.; Bougrov, V. E. ^[3]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. Microsensor Technology (Russian Federation)
3. ITMO University (Russian Federation)

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

• OSTI ID: 22649643
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROLUMINESCENCE
ELECTRONS
HETEROJUNCTIONS
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASER MATERIALS
RECOMBINATION
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K