The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP

Journal Article · Wed Apr 15 04:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609040174· OSTI ID:21260381

Kabanov, V V; Lebiadok, E V; Ryabtsev, A G; Schemelev, M A ^[1]; Sherstnev, V V; Astakhova, A P; Yakovlev, Yu P ^[2]

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1. National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)
2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

For disc lasers based on the InAs/InAsSbP heterostructure with a generation wavelength of 3.03-3.06 {mu}m, the internal quantum yield of luminescence and rates of radiative and nonradiative recombination in a temperature range of 85-120 K are determined. It is established that as the temperature increases, the relative contribution of the rate of nonradiative recombination to the density of the threshold current increases from 89.9 to 92.8%. It is shown that the most probable mechanisms of nonradiative transitions in the InAs/InAsSbP disc heterolasers can be the CHCC and CHSH Auger processes with involvement of phonons. Coefficients of total losses for two experimentally observed generation bands are determined, and the maximum level of the internal optical losses is estimated. The figure of merit of the resonator of the InAs/InAsSbP disc heterolaser is {approx}10{sup 4}.

• OSTI ID: 21260381
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONIDES
INDIUM ARSENIDES
LUMINESCENCE
PHONONS
PHOSPHIDES
RECOMBINATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
THRESHOLD CURRENT
WAVELENGTHS