Method of making an InAsSb/InAsSbP diode lasers
Patent
·
OSTI ID:527748
InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- Assignee:
- Northwestern Univ., Evanston, IL (United States)
- Patent Number(s):
- US 5,658,825/A/
- Application Number:
- PAN: 8-717,125; CNN: Grant DAAH04-95-1-0343
- OSTI ID:
- 527748
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method of making an InAsSb/InAsSbP diode lasers
InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 {micro}m grown by metal-organic chemical vapor deposition
Development of InAsSb-based light emitting diodes for chemical sensing systems
Patent
·
Tue Dec 31 23:00:00 EST 1996
·
OSTI ID:871102
InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 {micro}m grown by metal-organic chemical vapor deposition
Journal Article
·
Fri Jan 31 23:00:00 EST 1997
· IEEE Photonics Technology Letters
·
OSTI ID:449543
Development of InAsSb-based light emitting diodes for chemical sensing systems
Technical Report
·
Sat Jan 31 23:00:00 EST 1998
·
OSTI ID:634114