InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 {micro}m grown by metal-organic chemical vapor deposition

Journal Article · Fri Jan 31 23:00:00 EST 1997 · IEEE Photonics Technology Letters

DOI:https://doi.org/10.1109/68.553081· OSTI ID:449543

Wu, D; Kaas, E; Diaz, J; Lane, B; Rybaltowski, A; Yi, H J; Razeghi, M ^[1]

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1. Northwestern Univ., Evanston, IL (United States). Dept. of Electrical Engineering and Computer Science

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-{micro}m cavity length and 100-{micro}m-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm{sup 2}, low internal loss of 3.0 cm{sup {minus}1}, far-field {theta}{sub {perpendicular}} of 34{degree} with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.

• OSTI ID: 449543
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 2 Vol. 9; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
HETEROJUNCTIONS
INFRARED RADIATION
LASER MATERIALS
OPERATION
PERFORMANCE
SEMICONDUCTOR LASERS