InAsSbP/InAsSb/InAs laser diodes ({lambda}=3.2 {mu}m) grown by low-pressure metal{endash}organic chemical-vapor deposition

Journal Article · Tue Dec 31 23:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119298· OSTI ID:435081

Diaz, J; Yi, H; Rybaltowski, A; Lane, B; Lukas, G; Wu, D; Kim, S; Erdtmann, M; Kaas, E; Razeghi, M ^[1]

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1. Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)

We report metal{endash}organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 {mu}m operating at temperatures up to 220 K with threshold current density of 40 A/cm{sup 2} at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 {mu}m stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 435081
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PULSES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT