Dry etching method for compound semiconductors

Shul, Randy J; Constantine, Christopher

Dry etching method for compound semiconductors

Patent · Tue Dec 31 23:00:00 EST 1996

OSTI ID:870918

Shul, Randy J ^[1]; Constantine, Christopher ^[2]

Albuquerque, NM
Safety Harbor, FL

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

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Research Organization:: SANDIA CORP

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5624529

Application Number:: 08/437532

OSTI ID:: 870918

Country of Publication:: United States

Language:: English

References (14)

Electron cyclotron resonance plasma etching of InP in CH ₄ /H ₂ /Ar Pearton, S. J.; Chakrabarti, U. K.; Kinsella, A. P. Applied Physics Letters, Vol. 56, Issue 15 https://doi.org/10.1063/1.102487	journal	April 1990
Plasma and wet chemical etching of In0.5Ga0.5P Lothian, J. R.; Kuo, J. M.; Ren, F. Journal of Electronic Materials, Vol. 21, Issue 4 https://doi.org/10.1007/BF02660409	journal	April 1992
Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges Constantine, C. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, Issue 4 https://doi.org/10.1116/1.585026	journal	July 1990
High‐rate, anisotropic dry etching of InP in HI‐based discharges Pearton, S. J.; Chakrabarti, U. K.; Katz, A. Applied Physics Letters, Vol. 60, Issue 7 https://doi.org/10.1063/1.106530	journal	February 1992
Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy Hayes, T. R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 5 https://doi.org/10.1116/1.584564	journal	September 1989
Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etching Hommel, J. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 6 https://doi.org/10.1116/1.585837	journal	November 1991
Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures Shul, R. J.; Constantine, C.; Schneider,Jr., R. P. Electronics Letters, Vol. 30, Issue 10 https://doi.org/10.1049/el:19940550	journal	May 1994
Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges Pearton, S. J.; Chakrabarti, U. K.; Lane, E. Journal of The Electrochemical Society, Vol. 139, Issue 3 https://doi.org/10.1149/1.2069316	journal	March 1992
635 nm GaInP/GaAlInP surface‐emitting laser diodes Ou, S. S.; Yang, J. J.; Jansen, M. Applied Physics Letters, Vol. 63, Issue 24 https://doi.org/10.1063/1.110168	journal	December 1993
High Rate Anisotropic Aluminum Etching Bruce, R. H.; Malafsky, G. P. Journal of The Electrochemical Society, Vol. 130, Issue 6 https://doi.org/10.1149/1.2119953	journal	June 1983
Smooth vertical etching of AlGaInP by Cl2 reactive ion beam etching Yoshikawa, T.; Sugimoto, Y.; Yoshii, H. Electronics Letters, Vol. 29, Issue 2 https://doi.org/10.1049/el:19930128	journal	January 1993
Microwave CI2/H2 discharges for high rate etching of InP Constantine, C.; Barratt, C.; Pearton, S. J. Electronics Letters, Vol. 28, Issue 18 https://doi.org/10.1049/el:19921112	journal	January 1992
Anisotropic reactive ion etching of InP in methane/hydrogen based plasmas McNabb, J. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 6 https://doi.org/10.1116/1.585839	journal	November 1991
GaInP/AlGaInP index waveguide-type visible laser diodes with dry-etched mesa stripes Yoshikawa, T.; Sugimoto, Y.; Hotta, H. Electronics Letters, Vol. 29, Issue 19 https://doi.org/10.1049/el:19931124	journal	January 1993

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Related Subjects

/438/216/252/
according
algainp
alloy
aluminum
anisotropically
anisotropically etched
bipolar
bipolar transistor
bipolar transistors
boron
boron trichloride
cavity surface
compound
compound semiconductor
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devices including
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dry etching
edge-emitting
edge-emitting lasers
effect transistor
effect transistors
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electronic devices
emitting laser
emitting lasers
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etching
etching method
field-effect
field-effect transistor
field-effect transistors
forming
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gaseous
gaseous plasma
heterojunction
heterojunction bipolar
hydrogen
including
including aluminum
including vertical
indium
lasers
layers
layers including
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material containing
material layer
material layers
methane
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modulators
photonic
plasma
reflectance
reflectance modulator
semiconductor
semiconductor alloy
semiconductor material
semiconductors
surface-emitting
surface-emitting laser
surface-emitting lasers
transistors
trichloride
vertical-cavity
vertical-cavity surface-emitting

Dry etching method for compound semiconductors

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References (14)

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