Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

Journal Article · Wed Nov 04 04:00:00 EST 1998 · Solid State and Materials Science

OSTI ID:1527

Abernathy, C R ^[1]; Hobson, W S; Hong, J; Lambers, E S; Pearton, S J; Shul, R J

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1. Sandia National Laboratories

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1527
• Report Number(s): SAND98-2470J; ON: DE00001527
• Journal Information: Solid State and Materials Science, Journal Name: Solid State and Materials Science
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
Etching
Plasma
Semiconductor Devices