Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition
GaAs-based metal semiconductor field effect transistors (MESFETS), heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) have been exposed to ECR SiJ&/NH3 discharges for deposition of SiNX passivating layers. The effect of source power, rf chuck power, pressure and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETS there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si-H)O complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three devices is minimized at low rf chuck power, moderate ECR source power and high deposition rates.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1088
- Report Number(s):
- SAND98-2297J; ON: DE00001088
- Journal Information:
- Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A
- Country of Publication:
- United States
- Language:
- English
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