Damage to III{endash}V devices during electron cyclotron resonance chemical vapor deposition

Journal Article · Thu Jul 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.582109· OSTI ID:359807

Lee, J W; Mackenzie, K D; Johnson, D ^[1]; Shul, R J ^[2]; Hahn, Y B; Hays, D C; Abernathy, C R ^[3]; Ren, F ^[4]; Pearton, S J ^[3]

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1. Plasma-Therm, Inc., St. Petersburg, Florida 33716 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
4. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

GaAs-based metal semiconductor field effect transistors (MESFETs), heterojunction bipolar transistors (HBTs), and high electron mobility transistors (HEMTs) have been exposed to ECR SiH{sub 4}/NH{sub 3} discharges for deposition of SiN{sub x} passivating layers. The effect of source power, rf chuck power, pressure, and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETs there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si{endash}H){degree} complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three devices is minimized at low rf chuck power, moderate ECR source power, and high deposition rates. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 359807
• Report Number(s): CONF-981126--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DENSITY
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HETEROJUNCTIONS
HYDROGENATION
PASSIVATION
PLASMA
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON NITRIDES
THIN FILMS