Reactive etching of III-V semiconductors

Journal Article · Thu Jun 30 04:00:00 EDT 1994 · International Journal of Modern Physics B; (United States)

DOI:https://doi.org/10.1142/S0217979294000762· OSTI ID:6887906

Pearton, S J ^[1]

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1. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

Anisotropic dry etching by a number of different techniques is widely employed in III-V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching. In this paper the authors review the different dry etching techniques, the plasma chemistries employed for III-V materials and electrical and optical changes to the near-surface of the etched sample. They give examples of the use of the use of dry etching in fabrication of heterojunction bipolar transistors, field effect transistors and various types of semiconductor lasers. Particular attention is paid to the characteristics of Electron Cyclotron Resonance discharges operating at high ion densities ([>=] 5 [times] 10[sup 11] cm[sup [minus]3]) and low pressure ([approximately] 1 m Torr) with low ion energies ([<=] 15 eV) which are ideally suited for dry etching of III-V semiconductors.

• OSTI ID: 6887906
• Journal Information: International Journal of Modern Physics B; (United States), Journal Name: International Journal of Modern Physics B; (United States) Vol. 8:14; ISSN IJPBEV; ISSN 0217-9792
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation &amp; Manufacture
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices &amp; Circuits-- (1990-)
ELECTRIC DISCHARGES
ETCHING
FABRICATION
MATERIALS
PHYSICAL PROPERTIES
PLASMA
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING