Dry etching method for compound semiconductors
Patent
·
OSTI ID:504964
A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,624,529/A/
- Application Number:
- PAN: 8-437,532
- OSTI ID:
- 504964
- Resource Relation:
- Other Information: PBD: 29 Apr 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dry etching method for compound semiconductors
Improved epitaxial layer design for real-time monitoring of dry etching in III--V compound heterostructures with depth accuracy of [plus minus]8 nm
Reactive etching of III-V semiconductors
Patent
·
Wed Jan 01 00:00:00 EST 1997
·
OSTI ID:504964
Improved epitaxial layer design for real-time monitoring of dry etching in III--V compound heterostructures with depth accuracy of [plus minus]8 nm
Journal Article
·
Fri Jul 01 00:00:00 EDT 1994
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
·
OSTI ID:504964
Reactive etching of III-V semiconductors
Journal Article
·
Thu Jun 30 00:00:00 EDT 1994
· International Journal of Modern Physics B; (United States)
·
OSTI ID:504964