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Title: Diamond film growth from fullerene precursors

Patent ·
OSTI ID:870901

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
DOE Contract Number:
W-31109-ENG-38
Assignee:
University of Chicago (Chicago, IL)
Patent Number(s):
US 5620512
OSTI ID:
870901
Country of Publication:
United States
Language:
English

References (19)

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Metastable Growth of Diamond and Diamond-Like Phases journal August 1991
Crushing C60 to diamond at room temperature journal January 1992
Growth mechanism of vapor-deposited diamond journal February 1988
Triplet states of fullerenes C60 and C70. Electron paramagnetic resonance spectra, photophysics, and electronic structures journal March 1991
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High-yield synthesis, separation, and mass-spectrometric characterization of fullerenes C60 to C266 journal September 1991
Superconductivity at 28.6 K in a rubidium-C60 fullerene compound, RbxC60, synthesized by a solution-phase technique journal July 1991
Laser deposition of carbon clusters on surfaces: A new approach to the study of Fullerenes journal December 1990
Fullerenes journal October 1991
Delayed electron emission from photoexcited C 60 journal November 1991
When Diamonds Met Buckyballs journal November 1991
Diamond Film Semiconductors journal October 1992
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Solid C60: a new form of carbon journal September 1990