Diamond film growth from fullerene precursors
Patent
·
OSTI ID:870901
- Downers Grove, IL
- Woodridge, IL
- Naperville, IL
A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- University of Chicago (Chicago, IL)
- Patent Number(s):
- US 5620512
- OSTI ID:
- 870901
- Country of Publication:
- United States
- Language:
- English
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