Diamond film growth from fullerene precursors

Gruen, Dieter M; Liu, Shengzhong; Krauss, Alan R; Pan, Xianzheng

Diamond film growth from fullerene precursors

Patent · Tue Dec 31 23:00:00 EST 1996

OSTI ID:870901

Gruen, Dieter M ^[1]; Liu, Shengzhong ^[2]; Krauss, Alan R ^[3]; Pan, Xianzheng ^[2]

Downers Grove, IL
Woodridge, IL
Naperville, IL

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL

DOE Contract Number:: W-31109-ENG-38

Assignee:: University of Chicago (Chicago, IL)

Patent Number(s):: US 5620512

OSTI ID:: 870901

Country of Publication:: United States

Language:: English

References (19)

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Diamond film growth from fullerene precursors

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References (19)

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