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Thick film hydrogen sensor

Patent ·
OSTI ID:870074
 [1];  [2]
  1. Knoxville, TN
  2. Oak Ridge, TN
+ Show Author Affiliations

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Research Organization:
LOCKHEED MARTIN ENRGY SYST INC
DOE Contract Number:
AC05-84OR21400
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5451920
OSTI ID:
870074
Country of Publication:
United States
Language:
English

References (1)

Bimetal Strip Hydrogen Gas Detectors journal July 1969

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Related Subjects

/338/
binder
composition
covers
deposited
deposited thereon
electrically
electrically insulating
electrically-insulating
electrically-insulating substrate
element
essentially
essentially inert
film
film hydrogen
film metal
forming
frit
glass
glass frit
hydrogen
hydrogen sensor
impermeable
inert
insulating
insulating substrate
layer
metallization
passivation
passivation layer
pd
resistors
sensor
sensor element
sinterable
sintered
substrate
thereon
thick
thick film