Thin film hydrogen sensor

Patent · Sat Jan 01 00:00:00 EST 1994

OSTI ID:869618

Lauf, Robert J ^[1]; Hoffheins, Barbara S ^[2]; Fleming, Pamela H ^[1]

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1. Oak Ridge, TN
2. Knoxville, TN

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5367283
• OSTI ID: 869618
• Country of Publication: United States
• Language: English

Related Subjects

film
hydrogen
sensor
element
comprises
essentially
inert
electrically-insulating
substrate
thin-film
metallization
deposited
thereon
forms
resistors
layer
pd
alloy
sensing
underlying
intermediate
metal
providing
enhanced
adhesion
electrically
insulating
impermeable
passivation
covers
left
uncovered
difference
electrical
resistances
covered
resistor
related
concentration
gas
exposed
sensor element
passivation layer
hydrogen sensor
film hydrogen
essentially inert
hydrogen concentration
electrically insulating
metal layer
electrical resistance
deposited thereon
providing enhanced
metallization deposited
element comprises
film metal
insulating substrate
electrically-insulating substrate
enhanced adhesion
/338/73/422/