Thin film hydrogen sensor

Patent · Fri Dec 31 23:00:00 EST 1993

OSTI ID:869618

Lauf, Robert J ^[1]; Hoffheins, Barbara S ^[2]; Fleming, Pamela H ^[1]

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1. Oak Ridge, TN
2. Knoxville, TN

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

• Research Organization: LOCKHEED MARTIN ENRGY SYST INC
• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
• Patent Number(s): US 5367283
• OSTI ID: 869618
• Country of Publication: United States
• Language: English

Related Subjects

/338/73/422/
adhesion
alloy
comprises
concentration
covered
covers
deposited
deposited thereon
difference
electrical
electrical resistance
electrically
electrically insulating
electrically-insulating
electrically-insulating substrate
element
element comprises
enhanced
enhanced adhesion
essentially
essentially inert
exposed
film
film hydrogen
film metal
forms
gas
hydrogen
hydrogen concentration
hydrogen sensor
impermeable
inert
insulating
insulating substrate
intermediate
layer
left
metal
metal layer
metallization
metallization deposited
passivation
passivation layer
pd
providing
providing enhanced
related
resistances
resistor
resistors
sensing
sensor
sensor element
substrate
thereon
thin-film
uncovered
underlying