Thin film hydrogen sensor

Patent · Tue Nov 22 00:00:00 EST 1994

OSTI ID:6941087

Lauf, R J; Hoffheins, B S; Fleming, P H

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
• Patent Number(s): US 5367283; A
• Application Number: PPN: US 7-957337
• OSTI ID: 6941087
• Resource Relation: Patent File Date: 6 Oct 1992
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
HYDROGEN
MONITORING
PROBES
DESIGN
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
GAS ANALYSIS
OPERATION
PALLADIUM
PALLADIUM ALLOYS
ALLOYS
ELECTRICAL PROPERTIES
ELEMENTS
METALS
NONMETALS
PHYSICAL PROPERTIES
PLATINUM METAL ALLOYS
PLATINUM METALS
TRANSITION ELEMENTS
080800* - Hydrogen- Properties & Composition