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Title: High voltage MOSFET switching circuit

Abstract

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Inventors:
 [1]
  1. (Livermore, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
869410
Patent Number(s):
US 5332938
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
voltage; mosfet; switching; circuit; source; lead; inductance; compensated; adding; inductor; gate; produces; inductive; spike; counters; drop; produce; rectangular; drive; waveform; internal; gate-source; terminals; voltage waveform; gate circuit; switching circuit; source lead; mosfet switching; /327/326/

Citation Formats

McEwan, Thomas E. High voltage MOSFET switching circuit. United States: N. p., 1994. Web.
McEwan, Thomas E. High voltage MOSFET switching circuit. United States.
McEwan, Thomas E. Sat . "High voltage MOSFET switching circuit". United States. https://www.osti.gov/servlets/purl/869410.
@article{osti_869410,
title = {High voltage MOSFET switching circuit},
author = {McEwan, Thomas E.},
abstractNote = {The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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