High voltage MOSFET switching circuit
Abstract
The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.
- Inventors:
-
- Livermore, CA
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 869410
- Patent Number(s):
- US 5332938
- Assignee:
- Regents of University of California (Oakland, CA)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- voltage; mosfet; switching; circuit; source; lead; inductance; compensated; adding; inductor; gate; produces; inductive; spike; counters; drop; produce; rectangular; drive; waveform; internal; gate-source; terminals; voltage waveform; gate circuit; switching circuit; source lead; mosfet switching; /327/326/
Citation Formats
McEwan, Thomas E. High voltage MOSFET switching circuit. United States: N. p., 1994.
Web.
McEwan, Thomas E. High voltage MOSFET switching circuit. United States.
McEwan, Thomas E. 1994.
"High voltage MOSFET switching circuit". United States. https://www.osti.gov/servlets/purl/869410.
@article{osti_869410,
title = {High voltage MOSFET switching circuit},
author = {McEwan, Thomas E},
abstractNote = {The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.},
doi = {},
url = {https://www.osti.gov/biblio/869410},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}
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