High voltage MOSFET switching circuit
Patent
·
OSTI ID:7082462
The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- A; US 5332938
- Application Number:
- PPN: US 7-863914
- OSTI ID:
- 7082462
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EQUIPMENT
FIELD EFFECT TRANSISTORS
INDUCTANCE
MOS TRANSISTORS
MOSFET
PHYSICAL PROPERTIES
PULSE CIRCUITS
PULSE SHAPERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SIGNAL CONDITIONERS
SWITCHES
SWITCHING CIRCUITS
TRANSISTORS
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EQUIPMENT
FIELD EFFECT TRANSISTORS
INDUCTANCE
MOS TRANSISTORS
MOSFET
PHYSICAL PROPERTIES
PULSE CIRCUITS
PULSE SHAPERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SIGNAL CONDITIONERS
SWITCHES
SWITCHING CIRCUITS
TRANSISTORS