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Title: High quality oxide films on substrates

Patent ·
OSTI ID:869138
 [1];  [2];  [3]
  1. Middle Island, NY
  2. Center Moriches, NY
  3. Henrietta, NY

A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

Research Organization:
Associated Universities, Inc., Upton, NY (United States)
DOE Contract Number:
AC02-76CH00016
Assignee:
Associated Universities, Inc. (Washington, DC)
Patent Number(s):
US 5282903
OSTI ID:
869138
Country of Publication:
United States
Language:
English

References (2)

Growth of Al oxide layers on GaAs (100) by reaction with condensed molecular oxygen journal June 1990
The formation of metal–oxygen species at low temperatures journal May 1990