High quality oxide films on substrates
Patent
·
OSTI ID:869138
- Middle Island, NY
- Center Moriches, NY
- Henrietta, NY
A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.
- Research Organization:
- Associated Universities, Inc., Upton, NY (United States)
- DOE Contract Number:
- AC02-76CH00016
- Assignee:
- Associated Universities, Inc. (Washington, DC)
- Patent Number(s):
- US 5282903
- OSTI ID:
- 869138
- Country of Publication:
- United States
- Language:
- English
Growth of Al oxide layers on GaAs (100) by reaction with condensed molecular oxygen
|
journal | June 1990 |
The formation of metal–oxygen species at low temperatures
|
journal | May 1990 |
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Related Subjects
quality
oxide
films
substrates
method
providing
film
material
surface
substrate
reactive
deposition
presence
solid
liquid
layer
oxidizing
gas
provided
amount
sufficient
dissipate
latent
heat
condensation
occurring
creating
favorable
environment
liquid layer
latent heat
oxide films
oxidizing gas
substrate surface
oxide film
amount sufficient
quality oxide
reactive deposition
oxidizing environment
/148/
oxide
films
substrates
method
providing
film
material
surface
substrate
reactive
deposition
presence
solid
liquid
layer
oxidizing
gas
provided
amount
sufficient
dissipate
latent
heat
condensation
occurring
creating
favorable
environment
liquid layer
latent heat
oxide films
oxidizing gas
substrate surface
oxide film
amount sufficient
quality oxide
reactive deposition
oxidizing environment
/148/