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Method for producing high quality oxide films on substrates

Patent ·
OSTI ID:869026
 [1];  [2];  [3]
  1. Middle Island, NY
  2. Center Moriches, NY
  3. Henrietta, NY
+ Show Author Affiliations
A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.
Research Organization:
ASSOC UNIVERSITIES INC
DOE Contract Number:
AC02-76CH00016
Assignee:
Associated Universities, Inc. (Washington, DC)
Patent Number(s):
US 5264394
OSTI ID:
869026
Country of Publication:
United States
Language:
English

References (12)

Photoemission studies of the interaction of Li and solid molecular oxygen journal March 1989
Growth of Al oxide layers on GaAs (100) by reaction with condensed molecular oxygen journal June 1990
Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers journal September 1979
Combined surface analysis by synchrotron radiation photoemission spectroscopy and surface extended x‐ray absorption fine structure of oxidation features of metal‐deposited GaAs
  • Oshima, Masaharu; Kawamura, Tomoaki; Maeyama, Satoshi
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 3 https://doi.org/10.1116/1.575724
journal May 1988
Al on GaAs(110) interface: Possibility of adatom cluster formation journal October 1981
Local atomic and electronic structure of oxide/GaAs and SiO 2 /Si interfaces using high‐resolution XPS journal September 1979
Initial oxidation and oxide/semiconductor interface formation on GaAs journal September 1979
UV photoemission study of low temperature oxygen adsorption on GaAs(110) journal January 1983
The formation of metal–oxygen species at low temperatures journal May 1990
Adsorption of O 2 and CO on cleaved GaAs(110) at low temperatures journal April 1983
The oxidation of GaAs(110): A reevaluation journal January 1984
Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces journal March 1989

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