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Plasma generating apparatus for large area plasma processing

Patent ·
OSTI ID:867907
 [1];  [1];  [1]
  1. Oak Ridge, TN
+ Show Author Affiliations

A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.

Research Organization:
LOCKHEED MARTIN ENRGY SYST INC
DOE Contract Number:
AC05-84OR21400
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5032202
OSTI ID:
867907
Country of Publication:
United States
Language:
English

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Related Subjects

/156/118/204/216/219/315/438/
001
0875
20-cm
5-inch
additional
apparatus
applications
based
beams
below
capable
chamber
cm
compact
configuring
confinement
confinement chamber
coupled
created
creates
current
current densities
cusps
cyclotron
cyclotron resonance
densities
device
diam
due
ecr
ecr plasma
electron
electron cyclotron
etch
field
generating
generating apparatus
highly
highly uniform
large-area
launcher
line
line-cusp
magnet
magnetic
magnetic field
microwave
microwave waveguide
permanent
permanent magnet
photoresist
plasma
plasma confinement
plasma generating
plasma process
plasma processing
plasma source
processing
producing
reduces
region
resonance
resulting
resulting plasma
silicon
silicon wafer
silicon wafers
single-coil
source
special
substrate
tesla
uniform
uniformity
wafers
waveguide