Plasma generating apparatus for large area plasma processing
- Oak Ridge, TN
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Number(s):
- US 5032202
- OSTI ID:
- 867907
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
generating
apparatus
processing
applications
based
permanent
magnet
line-cusp
confinement
chamber
coupled
compact
single-coil
microwave
waveguide
launcher
device
creates
electron
cyclotron
resonance
ecr
created
line
cusps
due
0875
tesla
magnetic
field
region
additional
special
configuring
reduces
substrate
below
001
resulting
source
capable
producing
large-area
20-cm
diam
highly
uniform
beams
current
densities
cm
etch
photoresist
5-inch
silicon
wafers
uniformity
highly uniform
ecr plasma
confinement chamber
current densities
electron cyclotron
plasma source
permanent magnet
magnetic field
plasma process
plasma confinement
plasma processing
cyclotron resonance
silicon wafer
silicon wafers
generating apparatus
resulting plasma
plasma generating
microwave waveguide
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