Plasma generating apparatus for large area plasma processing
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm[sup 2]. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity. 3 figures.
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- Patent Number(s):
- US 5032202; A
- Application Number:
- PPN: US 7-416804
- OSTI ID:
- 7083823
- Country of Publication:
- United States
- Language:
- English
Similar Records
Potential applications of an electron cyclotron resonance multicusp plasma source
Potential applications of an electron cyclotron resonance multicusp plasma source
Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BEAM PRODUCTION
BEAMS
CONFINEMENT
CYCLOTRON RESONANCE
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRON CYCLOTRON-RESONANCE
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
ETCHING
INTEGRATED CIRCUITS
ION BEAMS
MAGNETIC CONFINEMENT
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
MICROWAVE RADIATION
PHOTORESISTORS
PLASMA CONFINEMENT
PLASMA PRODUCTION
RADIATIONS
RESISTORS
RESONANCE
SURFACE FINISHING