Integrated injection-locked semiconductor diode laser

Patent · Tue Jan 01 04:00:00 EST 1991

OSTI ID:867716

Hadley, G Ronald ^[1]; Hohimer, John P ^[1]; Owyoung, Adelbert ^[1]

---

1. Albuquerque, NM

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4995047
• OSTI ID: 867716
• Country of Publication: United States
• Language: English

Related Subjects

/372/
125
250
angle
array
beam
capable
continuous
continuous wave
current
degrees
diffraction limited
diode
diode laser
electronic
emission
facet
high-power
high-power diode
independently-controlled
injection
injection locked
injection-locked
injects
integrated
integrated injection-locked
laser
laser array
laser beam
lasing
levels
limited
locked
master
master laser
mw
near-diffraction
obtained
on-chip
output
output beam
power
power level
power levels
provided
rear
reflection
semiconductor
semiconductor diode
single
single-facet
slave
steering
total
varying
wave