Integrated injection-locked high-power cw diode laser arrays

Journal Article · Mon Aug 07 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101845· OSTI ID:5969022

Hohimer, J P; Myers, D R; Brennan, T M; Hammons, B E

We report the first integrated injection-locked high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This device emits a near-diffraction-limited (0.5/degree/ full width at half maximum) single-lobed far-field emission beam at single-facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single-lobed emission over an angular range of 0.50/degree/ at a rate of /minus/1.2/times/10/sup /minus/2/ deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high-power diode laser devices.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185(US)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5969022
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
BEAM OPTICS
CONTROL
DATA
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
INFORMATION
LASER RADIATION
LASERS
MODE LOCKING
NUMERICAL DATA
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING