Injection-locking characteristics of gain-guided diode laser arrays with an on-chip'' master laser

Journal Article · Mon Apr 16 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103162· OSTI ID:6944257

Hohimer, J P; Myers, D R; Brennan, T M; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

We report measurements of the injection-locking characteristics of a high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This integrated injection-locked array emits a near-diffraction-limited single-lobed output beam at cw power levels up to 220 mW/facet. By controlling the current to the master laser, the single-lobed output beam can be electronically steered over a far-field angle of {gt}1.7{degree}. We also report preliminary studies of the coupling interaction in these integrated devices.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6944257
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:16; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
GAIN
LASER CAVITIES
LASERS
MODE LOCKING
NATIONAL ORGANIZATIONS
SANDIA LABORATORIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
US AEC
US DOE
US ERDA
US ORGANIZATIONS