Integrated injection-locked semiconductor diode laser

Patent · 19 February 1991

OSTI ID:7275159

Hadley, G R; Hohimer, J P; Owyoung, A

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 4995047; A
• Application Number: PPN: US 7-400621
• OSTI ID: 7275159
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
BEAM OPTICS
DESIGN
ELECTROMAGNETIC RADIATION
LASER RADIATION
LASERS
MODE LOCKING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS