VUV lithography

Patent · Mon Jan 01 04:00:00 EST 1990

OSTI ID:867660

George, Edward V ^[1]; Oster, Yale ^[2]; Mundinger, David C ^[3]

---

1. Livermore, CA
2. Danville, CA
3. Stockton, CA

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States Department of Energy (Washington, DC)
• Patent Number(s): US 4980563
• OSTI ID: 867660
• Country of Publication: United States
• Language: English

Related Subjects

/250/313/
1700-1300a
850-650a
argon
bombarded
camera
coated
coated substrate
cooled
cryogenically
cryogenically cooled
deep
demagnification
e-beam
e-beam pumped
emitting
excimer
fluorescence
formed
formed integrally
gas
helium
images
integrally
krypton
layer
lithography
mask
mirrors
multilayer
multilayer mirror
neon
obtained
performed
plate
preselected
produces
projection
projection lithography
pumped
pumped solid
radiation
range
reduction
reduction camera
reflectivity
resist
resist coated
shorter
shorter wavelength
solid
solid layer
source
source produces
substrate
utilizes
vuv
wavelength
wavelengths
xenon