VUV lithography
Patent
·
OSTI ID:7018790
Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- A; US 4980563
- Application Number:
- PPN: US 7-462251
- OSTI ID:
- 7018790
- Country of Publication:
- United States
- Language:
- English
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