VUV lithography

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867660

George, Edward V ^[1]; Oster, Yale ^[2]; Mundinger, David C ^[3]

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1. Livermore, CA
2. Danville, CA
3. Stockton, CA

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States Department of Energy (Washington, DC)
• Patent Number(s): US 4980563
• OSTI ID: 867660
• Country of Publication: United States
• Language: English

Related Subjects

vuv
lithography
deep
projection
performed
e-beam
pumped
solid
excimer
source
mask
reduction
camera
produces
radiation
range
1700-1300a
xenon
krypton
argon
shorter
wavelengths
850-650a
obtained
neon
helium
layer
gas
formed
cryogenically
cooled
plate
bombarded
fluorescence
utilizes
multilayer
mirrors
reflectivity
wavelength
images
resist
coated
substrate
preselected
demagnification
integrally
emitting
formed integrally
cryogenically cooled
projection lithography
shorter wavelength
coated substrate
source produces
reduction camera
solid layer
multilayer mirror
resist coated
pumped solid
e-beam pumped
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