Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

Patent · Sat Dec 31 23:00:00 EST 1988

OSTI ID:866838

Norwood, David P ^[1]

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1. Albuquerque, NM

A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by Department of Energy (Washington, DC)
• Patent Number(s): US 4801469
• OSTI ID: 866838
• Country of Publication: United States
• Language: English

Related Subjects

/427/29/338/
10
100
addition
circuit
circuit structure
conductors
containing
depositing
dielectric
dielectric substrate
enables
fabricated
film
film circuit
film hybrid
formation
gold
hybrid
hybrid microcircuit
layer
layers
manufacturing
manufacturing process
microcircuit
multiple
multiple sheet
obtaining
ohm
ohms
otherwise
pd
photoprocessing
process
process enables
processing step
processing steps
provide
resirs
resistances
resistors
sheet
simple
square
standard
standeard
steps
structure
substrate
successive
successive layer
successive layers
tfn