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U.S. Department of Energy
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Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

Patent ·
OSTI ID:6729105

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-76DP00789
Assignee:
Dept. of Energy
Patent Number(s):
4,801,469
Application Number:
06/894,145
OSTI ID:
6729105
Country of Publication:
United States
Language:
English