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U.S. Department of Energy
Office of Scientific and Technical Information

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

Patent ·
OSTI ID:6257919
A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.
Assignee:
Dept. of Energy, Washington, DC
Patent Number(s):
US 4801469
OSTI ID:
6257919
Country of Publication:
United States
Language:
English