Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors
Patent
·
OSTI ID:6257919
A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4801469
- OSTI ID:
- 6257919
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
METALS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PALLADIUM
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TANTALUM NITRIDES
THIN FILMS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
METALS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PALLADIUM
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TANTALUM NITRIDES
THIN FILMS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS