Method and apparatus for plasma source ion implantation

Patent · Fri Jan 01 00:00:00 EST 1988

OSTI ID:866687

Conrad, John R ^[1]

---

1. Madison, WI

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

• Research Organization: Univ. of Wisconsin, Madison, WI (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-78ET51015
• Assignee: Wisconsin Alumni Research Foundation (Madison, WI)
• Patent Number(s): US 4764394
• OSTI ID: 866687
• Country of Publication: United States
• Language: English

Related Subjects

method
apparatus
plasma
source
implantation
surfaces
three-dimensional
targets
achieved
forming
ionized
target
enclosing
chamber
applying
pulse
voltage
conductive
walls
driven
simultaneously
manipulation
repetitive
pulses
typically
20
kilovolts
causes
deeply
formed
neutral
gas
introduced
evacuated
therein
ionizing
radiation
constant
provided
surrounds
process
significant
increases
surface
hardness
wear
characteristics
various
materials
obtained
manner
neutral gas
significant increase
plasma source
ionizing radiation
evacuated chamber
ionized plasma
wear characteristics
various materials
repetitive pulses
surface hardness
implantation process
gas introduced
conductive walls
various material
/427/