Method and apparatus for plasma source ion implantation
Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- DOE Contract Number:
- AC02-78ET51015
- Assignee:
- Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Patent Number(s):
- US 4764394; A
- Application Number:
- CNN: ECS-8314488; PPN: US 7-005457
- OSTI ID:
- 7072638
- Resource Relation:
- Patent File Date: 20 Jan 1987
- Country of Publication:
- United States
- Language:
- English
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