Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

Title: Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

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Abstract

The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

Inventors:

Sharp, Kenneth G ^[1]; D'Errico, John J ^[2]

Midland, MI
Fenton, MI

Publication Date:: 1988-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 866676

Patent Number(s):: US 4762808

Assignee:: Dow Corning Corporation (Midland, MI)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; forming; semiconducting; amorphous; silicon; films; thermal; decomposition; fluorohydridodisilanes; relates; photoconductive; semiconductive; substrate; vapor; phase; fluorohydridodisilane; mixture; useful; protection; surfaces; including; electronic; devices; silicon films; silicon film; thermal decomposition; amorphous silicon; electronic devices; vapor phase; electronic device; phase thermal; /427/136/423/430/438/

Citation Formats


                    Sharp, Kenneth G, and D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes.  United States: N. p., 1988. 
        Web.

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                    Sharp, Kenneth G, & D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes.  United States.

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                    Sharp, Kenneth G, and D'Errico, John J. Fri .  
        "Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes".  United States.  https://www.osti.gov/servlets/purl/866676.

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@article{osti_866676,

  title        = {Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes},

  author       = {Sharp, Kenneth G and D'Errico, John J},

  abstractNote = {The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/866676},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {1}

}

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