Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
Abstract
The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.
- Inventors:
-
- Midland, MI
- Fenton, MI
- Publication Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866676
- Patent Number(s):
- US 4762808
- Assignee:
- Dow Corning Corporation (Midland, MI)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; semiconducting; amorphous; silicon; films; thermal; decomposition; fluorohydridodisilanes; relates; photoconductive; semiconductive; substrate; vapor; phase; fluorohydridodisilane; mixture; useful; protection; surfaces; including; electronic; devices; silicon films; silicon film; thermal decomposition; amorphous silicon; electronic devices; vapor phase; electronic device; phase thermal; /427/136/423/430/438/
Citation Formats
Sharp, Kenneth G, and D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States: N. p., 1988.
Web.
Sharp, Kenneth G, & D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States.
Sharp, Kenneth G, and D'Errico, John J. Fri .
"Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes". United States. https://www.osti.gov/servlets/purl/866676.
@article{osti_866676,
title = {Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes},
author = {Sharp, Kenneth G and D'Errico, John J},
abstractNote = {The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.},
doi = {},
url = {https://www.osti.gov/biblio/866676},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}
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