Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
Patent
·
OSTI ID:866676
- Midland, MI
- Fenton, MI
The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.
- Research Organization:
- MIDWEST RESEARCH INSTITUTE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Dow Corning Corporation (Midland, MI)
- Patent Number(s):
- US 4762808
- OSTI ID:
- 866676
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/427/136/423/430/438/
amorphous
amorphous silicon
decomposition
devices
electronic
electronic device
electronic devices
films
fluorohydridodisilane
fluorohydridodisilanes
forming
including
method
mixture
phase
phase thermal
photoconductive
protection
relates
semiconducting
semiconductive
silicon
silicon film
silicon films
substrate
surfaces
thermal
thermal decomposition
useful
vapor
vapor phase
amorphous
amorphous silicon
decomposition
devices
electronic
electronic device
electronic devices
films
fluorohydridodisilane
fluorohydridodisilanes
forming
including
method
mixture
phase
phase thermal
photoconductive
protection
relates
semiconducting
semiconductive
silicon
silicon film
silicon films
substrate
surfaces
thermal
thermal decomposition
useful
vapor
vapor phase