Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

Patent · Tue Aug 09 04:00:00 EDT 1988

OSTI ID:5636099

Sharp, K G; D'Errico, J J

This patent describes a method of forming an amorphous silicon-containing film on a substrate. The method comprises: the step of decomposing a vapor phase consisting essentially of a fluorohydridodisilane or mixture of fluorohydridodisilanes, wherein the fluorohydridodisilane is represented by the formula Si{sub 2}F{sub {ital x}}H{sub 6{minus}{ital x}} wherein x is an integer from 1 to 5, at a temperature sufficient to cause the thermal decomposition of the fluorohydridodisilane or mixture of fluorohydridodisilanes in a reaction chamber which contains, or is connected to a chamber containing, a substrate which is thermally and chemically stable at the decomposition temperature in the atmosphere of the reaction chamber, whereby the film is formed on the substrate.

• Assignee: Dow Corning Corp., Midland, TX (USA)
• Patent Number(s): US 4762808; A
• Application Number: PPN: US 7-064641A
• OSTI ID: 5636099
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
DECOMPOSITION
ELEMENTS
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PYROLYSIS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SUBSTRATES
THERMOCHEMICAL PROCESSES