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Method for preparing a thin film amorphous silicon having high reliability

Patent ·
OSTI ID:6420659
A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as the other electrode while introducing a fluoride semiconductor material into said reaction chamber. A high frequency electric field is generated within the reaction chamber to ionize the semiconductor material and decompose the fluoride of the semiconductor material, whereby an amorphous semiconductor film is deposited on the substrate.
Assignee:
Nippon Electric Co., Ltd. (Japan)
Patent Number(s):
US 4441973
OSTI ID:
6420659
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ABSORPTION
AMORPHOUS STATE
ELECTRIC FIELDS
ELECTRODES
ELECTROLYSIS
ELEMENTS
ENERGY ABSORPTION
FABRICATION
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
LYSIS
MATERIALS
OPTICS
RELIABILITY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
THERMAL COMFORT
THIN FILMS