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Title: Fluorination of amorphous thin-film materials with xenon fluoride

Abstract

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Inventors:
 [1]
  1. (Haifa, IL)
Publication Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
866659
Patent Number(s):
US 4761302
Assignee:
United States Department of Energy (Washington, DC) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
fluorination; amorphous; thin-film; materials; xenon; fluoride; method; disclosed; producing; fluorine-containing; semiconductor; material; preferably; comprising; silicon; depositing; substrate; introducing; film; deposition; process; preferably comprising; film materials; film deposition; amorphous silicon; semiconductor material; deposition process; film material; amorphous semiconductor; thin-film material; amorphous thin-film; /427/136/

Citation Formats

Weil, Raoul B. Fluorination of amorphous thin-film materials with xenon fluoride. United States: N. p., 1988. Web.
Weil, Raoul B. Fluorination of amorphous thin-film materials with xenon fluoride. United States.
Weil, Raoul B. Fri . "Fluorination of amorphous thin-film materials with xenon fluoride". United States. https://www.osti.gov/servlets/purl/866659.
@article{osti_866659,
title = {Fluorination of amorphous thin-film materials with xenon fluoride},
author = {Weil, Raoul B.},
abstractNote = {A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

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