Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Fluorination of amorphous thin-film materials with xenon fluoride

Patent ·
OSTI ID:866659
 [1]
  1. Haifa, IL
+ Show Author Affiliations
A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
Research Organization:
MIDWEST RESEARCH INSTITUTE
DOE Contract Number:
AC02-83CH10093
Assignee:
United States Department of Energy (Washington, DC)
Patent Number(s):
US 4761302
OSTI ID:
866659
Country of Publication:
United States
Language:
English

Similar Records

Fluorination of amorphous thin-film materials with xenon fluoride
Patent · Fri May 01 00:00:00 EDT 1987 · OSTI ID:6710874
Fluorination of amorphous thin-film materials with xenon fluoride
Patent · Tue Aug 02 00:00:00 EDT 1988 · OSTI ID:6834537
Method for preparing a thin film amorphous silicon having high reliability
Patent · Mon Apr 09 23:00:00 EST 1984 · OSTI ID:6420659

Related Subjects

/427/136/
amorphous
amorphous semiconductor
amorphous silicon
amorphous thin-film
comprising
depositing
deposition
deposition process
disclosed
film
film deposition
film material
film materials
fluoride
fluorination
fluorine-containing
introducing
material
materials
method
preferably
preferably comprising
process
producing
semiconductor
semiconductor material
silicon
substrate
thin-film
thin-film material
xenon