Fluorination of amorphous thin-film materials with xenon fluoride
Patent
·
OSTI ID:6834537
A process for incorporating fluorine into amorphous thin-film material is described comprising depositing amorphous thin-film material onto a substrate. The amorphous material is selected from the group consisting of silicon, germanium, or mixtures thereof, and introducing XeF/sub 2/ during the thin-film deposition process to incorporate and intimately intermix fluorine into the thin-film material.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4761302
- OSTI ID:
- 6834537
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISPERSIONS
ELEMENTS
FILMS
FLUORIDES
FLUORINATION
FLUORINE COMPOUNDS
GERMANIUM
HALIDES
HALOGEN COMPOUNDS
HALOGENATION
MATERIALS TESTING
METALS
MIXTURES
RARE GAS COMPOUNDS
SEMIMETALS
SILICON
SURFACE COATING
TESTING
THIN FILMS
XENON COMPOUNDS
XENON FLUORIDES
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISPERSIONS
ELEMENTS
FILMS
FLUORIDES
FLUORINATION
FLUORINE COMPOUNDS
GERMANIUM
HALIDES
HALOGEN COMPOUNDS
HALOGENATION
MATERIALS TESTING
METALS
MIXTURES
RARE GAS COMPOUNDS
SEMIMETALS
SILICON
SURFACE COATING
TESTING
THIN FILMS
XENON COMPOUNDS
XENON FLUORIDES