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U.S. Department of Energy
Office of Scientific and Technical Information

Fluorination of amorphous thin-film materials with xenon fluoride

Patent ·
OSTI ID:6834537
A process for incorporating fluorine into amorphous thin-film material is described comprising depositing amorphous thin-film material onto a substrate. The amorphous material is selected from the group consisting of silicon, germanium, or mixtures thereof, and introducing XeF/sub 2/ during the thin-film deposition process to incorporate and intimately intermix fluorine into the thin-film material.
Assignee:
Dept. of Energy, Washington, DC
Patent Number(s):
US 4761302
OSTI ID:
6834537
Country of Publication:
United States
Language:
English