Fluorination of amorphous thin-film materials with xenon fluoride
Patent
·
OSTI ID:6710874
A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
- Research Organization:
- Solar Energy Research Inst., Golden, CO (USA)
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A6045920
- Application Number:
- ON: DE89000211
- OSTI ID:
- 6710874
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
DEPOSITION
DESIGN
FILMS
FLUORIDES
FLUORINATION
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENATION
INVENTIONS
MATERIALS
RARE GAS COMPOUNDS
SEMICONDUCTOR MATERIALS
THIN FILMS
XENON COMPOUNDS
XENON FLUORIDES
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
DEPOSITION
DESIGN
FILMS
FLUORIDES
FLUORINATION
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENATION
INVENTIONS
MATERIALS
RARE GAS COMPOUNDS
SEMICONDUCTOR MATERIALS
THIN FILMS
XENON COMPOUNDS
XENON FLUORIDES